نتایج جستجو برای: leakage delay

تعداد نتایج: 160105  

Journal: :IEICE Transactions 2009
Tsuyoshi Sakata Takaaki Okumura Atsushi Kurokawa Hidenari Nakashima Hiroo Masuda Takashi Sato Masanori Hashimoto Koutaro Hachiya Katsuhiro Furukawa Masakazu Tanaka Hiroshi Takafuji Toshiki Kanamoto

Leakage current is an important qualitative metric of LSI (Large Scale Integrated circuit). In this paper, we focus on reduction of leakage current variation under the process variation. Firstly, we derive a set of quadratic equations to evaluate delay and leakage current under the process variation. Using these equations, we discuss the cases of varying leakage current without degrading delay ...

2004
Anup Kumar Sultania Dennis Sylvester Sachin S. Sapatnekar

Gate oxide tunneling current (Igate) will become the dominant component of leakage in CMOS circuits as the physical oxide thickness (Tox) goes below 15Å. Increasing the value of Tox reduces the leakage at the expense of an increase in delay, and a practical tradeoff between delay and leakage can be achieved by assigning one of the two permissible Tox values to each transistor. In this paper, we...

2011
Rui Zhang Joel A. Greenberg Martin C. Fischer Daniel J. Gauthier

We study ultrabroadband slow light in a warm rubidium vapor cell. By working between the D1 and D2 transitions, we find a several-nanometer window centered at 788:4 nm in which the group index is highly uniform and the absorption is small (<1%). We demonstrate that we can control the group delay by varying the temperature of the cell, and we observe a tunable fractional delay of 18 for pulses a...

Journal: :IEICE Electronic Express 2011
Ching-Che Chung Duo Sheng Chia-Lin Chang

This paper presents an ultra-wide-range all-digital delaylocked loop (DLL). The proposed DLL uses a novel delay circuit which uses the transistor’s leakage current in advanced CMOS process to generate a very large propagation delay. Thus, the proposed DLL can operate at very low frequency with small chip area and low power consumption. The proposed DLL can operate from 600 kHz to 1.2GHz in the ...

2011
Fabio Frustaci Pasquale Corsonello Massimo Alioto

In this paper, the novel “tapered-Vth” approach to design energy-efficient CMOS buffers is introduced. In this approach, the substantial energy consumption due to leakage is reduced by tapering the threshold voltage throughout the buffer stages, other than tapering the transistor size. More specifically, the threshold voltage is progressively reduced when going from the last to the first stage....

The paper is concerned with robust stability criteria for Takagi- Sugeno (T-S) fuzzy systems with distributed delays and time delay in the leakage term. By exploiting a model transformation, the system is converted to one of the neutral delay system. Global robust stability result is proposed by a new Lyapunov-Krasovskii functional which takes into account the range of delay and by making use o...

Journal: :EURASIP J. Wireless Comm. and Networking 2016
Robin Gerzaguet Laurent Ros Fabrice Belvèze Jean-Marc Brossier

This paper deals with the performance of the fractional delay estimator in the joint complex amplitude/delay estimation algorithm dedicated to digital Tx leakage compensation in FDD transceivers. Such transceivers suffer from transmitter-receiver signal leakage. Combined with non linearity of components in the receiver path, the baseband received signal is impaired by a baseband polluting signa...

Journal: :iranian journal of fuzzy systems 2012
p. balasubramaniam s. lakshmanan r. rakkiyappan

the paper is concerned with robust stability criteria for takagi- sugeno (t-s) fuzzy systems with distributed delays and time delay in the leakage term. by exploiting a model transformation, the system is converted to one of the neutral delay system. global robust stability result is proposed by a new lyapunov-krasovskii functional which takes into account the range of delay and by making use o...

2015
Deepali Verma Shyam Babu Shyam Akashe

When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید