In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

This paper investigates the effect of gate electrode work function in 30 nm gate length conventional and junctionless FinFETs using technology computer-aided design (TCAD) simulations. DC parameters, threshold voltage (vt), drive current (Ion) and output resistance (Ro), and RF parameters, unity gain cutoff frequency (ft), non-quasi static (NQS) delay and input impedance (Z11) are investigated....

In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate MOSFETs gate material surrounds the channel in all direction , therefore it can overcome t...

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

Article history: Received 2 February 2016 Received in revised form 10 May 2016 Accepted 16 May 2016 Available online 9 June 2016 Thiswork proposes a numerical charge-based newmodel to describe the drain current for triple gate junctionless nanowire transistors (3G JNT). The drain current is obtained through a numerical integration of a single expression that physically describes the junctionles...

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.

An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay prod...