The three-dimensional (3D) integrated circuit technology developed by MIT Lincoln Laboratory allows circuit structure that forms on several silicon-on-insulator (SOI) substrates to be integrated into a 3D integrated circuit. This 3D technology gives the possibility of better thermal and noise management, more compact design, and so on. However, circuit design in the 3D technology has not been f...

Having now produced devices with sufficient Q, thermal stability, aging stability, and manufacturability, vibrating RF MEMS technology is already finding its way into next generation timing and wireless applications. At this juncture, the technology is now poised to take its next logical steps: higher levels of circuit complexity and integration. In particular, as vibrating RF MEMS devices are ...

Fabrication of an integrated circuit with smaller area, besides reducing the cost of manufacturing, usually causes a reduction in the power dissipation and propagation delay. Using the static CMOS technology to fabricate a circuit that realizes a specific logic function and occupies a minimum space, it must be implemented with continuous diffusion runs. Therefore, at the design stage, an Euleri...

Fabrication of an integrated circuit with smaller area, besides reducing the cost of manufacturing, usually causes a reduction in the power dissipation and propagation delay. Using the static CMOS technology to fabricate a circuit that realizes a specific logic function and occupies a minimum space, it must be implemented with continuous diffusion runs. Therefore, at the design stage, an Euleri...