A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realize...

ii These results indicate that short IED bipolar leads provide a signal that is adequate for clinical use. Furthermore, the performance of these leads was shown to be similar or even superior to that of the commonly used standard leads. It can be concluded that when correctly positioned, short IED bipolar leads are useful and can give additional value for clinical diagnostics. These results pro...

Article history: Received 25 May 2015 Received in revised form 19 June 2015 Accepted 20 June 2015 Available online xxxx

Article history: Received 25 May 2015 Received in revised form 20 June 2015 Accepted 22 June 2015 Available online xxxx

IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...