A new design for a tunable multi-channel plasmonic bandpass filter was numerically investigated using the two-dimensional finite element method (2D-FEM). The proposed consists of metal-insulator-metal waveguide (MIM-WG) and double-sided arrow-shaped cavities. Silver (Ag) non-linear optical medium (InGaAsP) are used in designed filter. InGaAsP fills bus refractive index is sensitive to incident ...

We present the first experimental study of the optical properties of HELP InGaAsP (InGaAsP grown by He-plasma-assisted molecular beam epitaxy) relevant to all-optical switching, and the first demonstration of picosecond switching using this material. We observed an optical response time of 15 ps, a nonlinear index change as large as 0.077, a sharp absorption band edge, and a small absorption ta...

Abstract A highly efficient compact tunable optical notch filter is proposed and analyzed using the 2D Finite Element Method (FEM). The structure consists of a slanted stub plasmonic resonator, Metal–Insulator–Metal (MIM) waveguide, InGaAsP as third-order non-linear material. By altering pumping state InGaAsP, filtered wavelengths may be easily controlled continuously over 200 nm range. suggest...

This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparat...

The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 1.3 μm telecommunication bands interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface recombination velocity—compared Si [Das et al., 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020), pp. 1167–1170]...

InGaAsP grown by He plasma assisted Molecular Beam Epitaxy has a 15 ps carrier lifetime and a sharp band edge allowing for an ultrafast response and a strong optical nonlinearity at the telecommunications wavelength of 1.55 μm. S.D. Benjamin, Li Qian, J.E. Ehrlich, P.W.E. Smith, B.J. Robinson, D.A. Thompson Picosecond carrier lifetime in InGaAsP... 1 Picosecond Carrier Lifetime in InGaAsP Grown...

The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusi...

The material in the resonant layer (RL) of ‘f.1’ consists of nanometer-sized iron particles in an InGaAsP host layer above the InP p-cladding a common 1.55 m multi-quantum well (MQW) laser structure as shown in Table III. InGaAsP has a refractive index of 3.4 which is higher than the refractive index of the InP pclad which is 3.16. These values satisfy the need to have the real part of the refr...

In this work we propose a method of calculation for estimating the drift mobility from photoluminescence. The method is based on the difference between the temperature of the scattered carriers after thermalization and the lattice temperature. The effective carrier temperature TE was determined experimentally by fitting the high-energy region of photoluminescence spectra. The total mobility is ...