InGaAs MOSFETs have been considered promising candidate for post-Si logic devices beyond 14nm technology node. To meet the increasing demand in electrostatic control at sub-100nm channel lengths, non-planar 3D structures have been introduced to the fabrication of InGaAs MOSFETs. In this paper, the fabrication and characterization of various non-planar 3D InGaAs MOSFETs have been demonstrated an...

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both on...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

InGaAs quantum dots (QDs) on GaP are promising for monolithic integration of optoelectronics with Si technology. To understand and improve the optical properties of InGaAs/GaP QD systems, detailed measurements of the QD atomic structure as well as the spatial distributions of each element at high resolution are crucial. This is because the QD band structure, band alignment, and optical properti...

Single-crystalline wurtzite InGaAs/InGaP nanopillars directly grown on a lattice-mismatched silicon substrate are demonstrated. The nanopillar growth is in a core-shell manner and gives a sharp, defect-free heterostructure interface. The InGaP shell provides excellent surface passivation effect for InGaAs nanopillars, as attested by 50-times stronger photoluminescence intensities and 5-times gr...

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An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morpholo...

We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electric...

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...

The switching-rate capability of mm-wave InGaAs PIN diodes of various sizes was evaluated for the first time by measuring their response times under various bias conditions. The dependencies of InGaAs PIN diode switching times are discussed, and the results are correlated with their DC characteristics. InGaAs PIN diodes demonstrated short switching times (fall time τF=250ps and rise time τR=130...