The theory of electron impact ionization of oneand two-electron atoms has advanced significantly in the past two years. This paper will summarize the progress that the members of our research center have contributed to.

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Article history: Received 26 August 2014 Received in revised form 1 December 2014 Accepted 1 December 2014 Available online 26 December 2014

Process-induced strain dependence of impact ionization efficiency (IIE) in nMOSFETs with a tensile contact etch stop layer (CESL) is presented for the first time. From the universal relationship between the IIE and the electric field in the pinch-off region, a difference in the IIE of nMOSFETs between without and with the tensile CESL is found. This result can be mainly attributed to the narrow...