in this paper, a low voltage and low power (lv/lp) operational transconductance amplifier (ota) using fgmos (floating-gate mos) transistor is proposed. the relative tuning range of 50 is achieved in this ota while only consumes 40 µw with 1.0 v supply voltage in tsmc 0.18 µm cmos technology. the simulation results of the proposed ota show an open loop gain of 30.2 db and a unity gain frequency ...

Abstract- A novel low-voltage two-stage operational amplifier employing resistive biasing is presented. This amplifier implements neutralization and correction common mode stability in second stage while employs capacitive dc level shifter and coupling between two stages. The structure reduces the power consumption and increases output voltage swing. The compensation is performed by simple mill...

In this work a low power, low voltage and high gain operational amplifier is proposed. For this purpose a negative resistance structure is used in parallel with output to improve the achievable gain. Because of using self cascode transistors in the output, the proposed structure remains approximately constant in a relatively large output voltage swing causing an invariable gain. To evaluate the...

A telescopic cascode opamp typically has a higher frequency capability and consumes less power than other topologies. The disadvantage of a telescopic opamp is severely limited output swing. In a conventional telescopic opamp shown in Figure 1, all transistors are biased in the saturation region. Transistors M1-M2, M7-M8 and the tail current source M9 must have at least Vds,sat to offer a good ...

This paper presents the analysis of dynamic noise margin of proposed 8T static random access memory (SRAM) cell. The proposed SRAM cell has two voltage sources, one connected to the bit line and the other is connected to bitbar line. These voltage sources are used to reduce the swing voltage at the output nodes. This reduction of swing voltage causes the reduction in dynamic power dissipation o...

Low power, high-speed bus architectures, based on low swing voltage technique, using multithreshold voltage transistors are proposed in this paper. Three different classes of driver/repeater/receiver circuits are introduced. The driver circuits are comprised of high threshold voltage MOSFET transistors, in order to reduce their output swing level voltage. For re-pulling up the low swing voltage...

A 1.8V, IMS/s, 8SdB SNR 2+2 mash ZA modulator with 10.9V reference voltage is realized by using the swing reduction sirnchue. Tlns smcture limits the output swing of all the integrators within half the reference voltage. Thus, low voltage and hgh speed operation is possible with even high reference voltage without degrading the performance of the modulator. The circuit is fabricated in CMOS 0.3...

Simple and symmetrical ultra low-voltage current mode analog circuits and autozeroing amplifiers are presented. The low-voltage analog circuits are based on low-voltage inverters resembling precharge digital logic. Ultra low-voltage analog circuits can be operated at supply voltages down to 250 mV with rail-to-rail input and output swing. The output current of the ultra low-voltage symmetrical ...

ABSTRACT In this paper, we present a temperature compensation method for logarithmic CMOS image sensors. As Bandgap technique, the compensation circuit generates VPTAT1 and VPTAT2 voltages to compensate temperature variation of the sensor output signal voltage (Out-AC-Signal) which we call VCTAT1 and output reference voltage (VRef−ph) which we call VCTAT2. The proposed method is divided into th...