This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

This paper discusses the effects of pore arrangements on the dielectric property of porous low-k and high-k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical str...

1. Abstract We have successfully engineered n-type and p-type metal electrodes with the correct work functions on high-K gate dielectrics for high-performance CMOS applications. The resulting metal gate/high-K dielectric stacks have i) equivalent oxide thickness (EOT) of 1.0nm with negligible gate oxide leakage, ii) desirable transistor threshold voltages for n-and p-channel MOSFETs, and iii) t...

Dielectric breakdown characteristics of high-k dielectric have been intensively studied to develop a lifetime extrapolation model for device with metal/high-k gate stacks. Majority of prior works treated the high-k dielectric as a single layer dielectric like thermally grown SiO2 while the actual structure of high-k dielectric consists of two layers (high-k layer stacked on interfacial SiO2 lik...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

Received Jan 24, 2017 Revised Mar 30, 2017 Accepted Apr 15, 2017 A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM ca...

Abstract: In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schrödinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulat...

Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2, dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope β of breakdown distribution is in the...