The main objective of our paper is to propose an approach studying the mechatronic system’s reliability through their high electron mobility transistors (HEMT). operating temperature one parameters that influences characteristics transistor, especially represents advantage over other transistor’s families. Several factors can influence this temperature. Thanks thermal modeling, it possible dete...

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

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Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...