Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

In this thesis innovative tunnel devices based on new architectures, new fabrication approaches and novel material combinations are fabricated and investigated in detail. In particular, nanowire homoand heterojunction tunnel diodes based on Si and InAs-Si have been demonstrated for the rst time. The gained knowledge and understanding of tunnel diodes is applied to design and fabricate InAs-Si h...

This research paper explains the effect of dimensions Gate-all-around Si nanowire tunneling field transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors characteristics tunnel transistors. The Silvaco TCAD has been used to study electrical TFET. Output (gate voltage-d...

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage trans...

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

The tunnel field-effect transistor (TFET) is considered a promising next-generation due to its potentially limit-breaking low subthreshold swing and better immunity against short-channel effects. However, the ON-state current (ION) of TFETs has been critical problem. In this work, we investigated effects source doping concentration gradient (SDG) on ION n-type Si gate-all-around (GAA) nanowire ...

Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...