Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the conventional high-voltage current switchi...

This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with th...

A buried metal heterojunction bipolar transistor with submicron emitter was fabricated by electron-beam lithography. Two tungsten wires of 100 nm width, 100 nm height and 200 nm period were buried in the InP collector layer for the device with an emitter area of 0.3×1.5 μm. Total base-collector capacitance was reduced to about 22% of that calculated from the physical dimensions of conventional ...

The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition ran...

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar based on lateral heterostructure of transition metal dichalcogenides. The device is thinner than Field Effect Transistor because it does not need top or bottom gate, since transport controlled by electrochemical potential base electrode. As typical transistors, collector curren...