We have characterized glass-glass and glass-Si bonding processes for the fabrication of wide, shallow nanofluidic channels with depths down to the nanometer scale. Nanochannels on glass or Si substrate are formed by reactive ion etching or a wet etching process, and are sealed with another flat substrate either by glass-glass fusion bonding (550 degrees C) or an anodic bonding process. We demon...

In this paper, the development of wafer bonding techniques of the most frequently used materials Si-to-glass, glass-to-glass and Si-to-Si is reported. To improve the bond quality of Si-to-glass and make glass-to-glass bonding viable at bonding temperatures less than 300 C, a hydrogen-free amorphous silicon layer of 20-100 nm thickness is deposited as an intermediate layer. For Si-to-glass bondi...

the purpose of this study was to evaluate the effect of er:yag laser on the shear bond strength of resin modified glass ionomer (rmgi) to enamel.twenty extracted caries-free human premolars were selected. the teeth were embedded in acrylic resin. the buccal surfaces of each sample were ground to plane enamel with carbonated disc. the teeth were randomly divided in two groups. in the first group...

A technical bottleneck to the broadening of applications of glass nanofluidic chips is bonding, due to the strict conditions, especially the extremely high temperatures (~1000 °C) and the high vacuum required in the current glass-to-glass fusion bonding method. Herein, we report a strong, nanostructure-friendly, and high pressure-resistant bonding method, performed at room temperature (RT, ~25 ...

objectives : this experimental study evaluated the effect of bonding application time on the microshear bond strength of composite resin to different types of glass ionomer cements (gics). materials and methods: one-hundred and sixty specimens (two conventional and two resin-modified gics) were prepared and divided into 16 groups. the surface of all specimens was prepared using two different bo...

By MEMS packaging test platform for bonding process of bonding temperature and bonding time, and test silicon specifications experimental study. Experimental results indicate that when the bonding voltage of 1200V, bonding temperature of 445 0 C to 455 0 C, bonding time is 60s, the void fraction is less than 5%. Glass and silicon wafer bonding quality can achieve the best. The experimental resu...

We report here on the results of experiments concerning particular bonding processes potentially useful for ultimate miniaturization of microfluidic systems. Direct anodic bonding of continuous thin Pyrex glass of 250 pm thickness to silicon substrates gives multiple, large voids in the glass. Etchback of thick glass of 1200 pm thickness bonded to silicon substrates gives thin continuous glass ...

Ceramics bonding is becoming an important technology and has found wide applications in different engineering and electronic industries. In this paper, furnace bonding of ceramics using solder glass frit was investigated with emphasis on the effects of surface treatment and bonding conditions on bonding strength. Alumina (Al2O3) sheet and SCHOTT solder glass G017-393 were used as the base and b...

The bonding of glass wafers to aluminum foils in multi-layer assemblies was investigated by the fieldassisted diffusion bonding process. Bonding was effected at temperatures in the range 350–450 C and with an applied voltage in the range 400–700 V under a pressure of 0.05 MPa. The experimental parameters of voltage and temperature were the main factors in influencing the ionic current leading t...

Several techniques for fabrication of nanochannels on both glass and silicon substrates have been investigated. The techniques investigated here include glass to glass anodic bonding with an intermediate layer of amorphous silicon, silicon to silicon anodic bonding with an intermediate layer of glass, and AuAu thermo-compression bonding of silicon wafers. In each case, the conduit’s height is d...