We present a novel model to describe conduction band of GaNxAs1−x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mi...

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by c...

Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spindependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied. By using the optical orientation photoluminescence (PL) technique, GaNAs is shown to be able to spin filter electrons injected from GaAs, which is a useful functional property for integratition with future electroni...

Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along ...

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heter...

III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon technology. Alloying of GaAs with nitrogen can further enhance performance and extend device function...

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Ga0.62In0.38N0.023As0.95Sb0.027/GaN0.025As0.975 quantum wells (QWs) used in standard GaAs-based GaInNAsSb/GaNAs vertical-cavity surface-emitting diode lasers (VCSELs) exhibit at room temperature (RT) the highest optical gain for the 1422 nm wavelength. Its RT continuous-wave threshold current for the 5 μm device is as low as only 0.68 mA. An increase in the QW active region temperature by about...

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