it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...

due to the high density and the low consumption power in the digital integrated circuits, mostly technology of cmos is used. during the past times, the metal oxide silicon field effect transistors (mosfet) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. b...

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...

Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...

This chapter aims to provide the reader with a practical knowledge about electrical methods to measure organic thin film transistor devices. It presents a series of recipes, which allow the experimentalist to gain insight into the performance and limitations of the devices and circuits being measured. It also gives guidelines on how to correctly interpret the measurements and to provide feedbac...

Over the past twenty years, research into the applications of organic semiconductors (OSCs) has intensified rapidly. Though their electron mobility is much lower than that of typical semiconductors, OSCs show promise in low-cost, flexible, lightweight, and environmentally-friendly semiconductor applications. Their hole mobility was found to be comparable to that of amorphous silicon (a-Si), wit...

ἀ ere are several different types of field effect transistors (FETs), each of which has a different operational principle. For example, there are metal oxide semiconductor (MOS) transistors, junction field effect transistors (JFETs), static induction transistors (SITs), the punch-through transistors (PHTs), and others. All of these devices employ the flow of majority carriers. ἀ e most popular ...

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...