Articles you may be interested in Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 thin films Appl. Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48Oδ films grown on nickel foils Appl. Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low freque...

Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferr...

Sr(Ti1-xFex)O3-δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO₃ buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1-xFex)O3-δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the fe...

Recent results of Raman spectroscopy studies of lattice dynamics and phase transitions in ferroelectric thin films and superlattices are reviewed. Raman studies of SrTiO3, BaTiO3, and BaxSr1−xTiO3 thin films in comparison to corresponding single crystals are presented; essential differences in the lattice dynamics behavior of thin films and single crystals are discussed. Application of ultravio...

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of 200 A and the thinnest ferroelectric films were 200 A thick, macroscopic sizes on an atomic scale. Langmuir ± Blodgett deposition of films one monolayer at a time has produced high quality ferroelectri...

The effects of non-equally biaxial in-plane misfit strains on the equilibrium polarization states and the dielectric properties of single-domain epitaxial ferroelectric thin films are investigated by a nonlinear thermodynamic theory. The “misfit strain-misfit strain” and “temperature-misfit strain” phase diagrams for single-domain BaTiO3 (BT) and PbTiO3 (PT) thin films grown on tetragonal subst...

Related Articles Correlation between growth dynamics and dielectric properties of epitaxial BaTiO3 films Appl. Phys. Lett. 100, 102904 (2012) Strong red emission in lead-free ferroelectric Pr3+-doped Na0.5Bi0.5TiO3 thin films without the need of charge compensation J. Appl. Phys. 110, 034102 (2011) Influence of thermal stresses on the electrocaloric properties of ferroelectric films Appl. Phys....

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric meas...

Title of Document: ORIENTATION DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF EPITAXIAL FERROELECTRIC THIN FILMS Jun Ouyang, Doctor of Philosophy, 2005 Directed By: Professor Alexander. L. Roytburd Dept. of Materials Science and Engineering There are both intrinsic piezoelectric response and extrinsic piezoelectric response in ferroelectric materials. The intrinsic piezoelectric response is due ...

Nowadays, ferroelectric thin films have attracted considerable attention because of their potential uses in device applications, such as sensors, micro electro-mechanical system (MEMS) and nonvolatile ferroelectric random access memory (NvFRAM) especially (Scott & Paz De Araujo, 1989; Paz De Araujo et al., 1995; Park et al. 1999). Lead zirconate titanate [PbZrxTi1-xO3 (PZT)] ferroelectric thin ...