the modulation response, relative intensity noise and frequency noise characteristics of qd lasers are investigated theoretically, in presence of an additional optical pumping. it is revealed that the modulation response of qd laser enhances under additional optical beam. by small signal analysis of the carriers' and photons' rates, it is proposed that by injecting excess carriers to ...

A modulated holding beam shining a VCSEL above threshold can improve modulation bandwidth by adjusting the semiconductor laser’s relaxation oscillation frequency. The improved modulation characteristics are accompanied by reduced damping rate. By choosing correct parameters, dynamical behavior of system and cavity solitons is changed.

Analytical approximations for the direct-current modulation bandwidth are obtained which highlight the deleterious effect of enhanced modal refractive index on the resonance frequency of metal-clad nanolasers. The concomitant utilisation of Purcell cavity-enhanced spontaneous emission is shown, in principle, to compromise achievable modulation bandwidths further. Using simplified forms for the ...

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...

We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaAlAs/InP quantum-dash lasers when the injected photons are 33 +/- 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models str...