the suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. a feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. physical vapor deposition (pvd) and pulsed plasma-enhanced chemical vapor deposition (pecvd), naturally, form asymmetric na...

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

zns/glass thinlayer in high vacuum condition and $40$ degree‎ ‎deposition angle has been produced by resistance evaporated method ‎with $28$ nm thickness‎. ‎cabin deposition temperature zns layer was‎ ‎about $50c$ and substrates were kept at room temperature‎. ‎the atomic ‎force microscopy (afm) and xrd analyses are perfectly accomplished‎ ‎for this layer.‎‎‎

In this study, we report on the deposition of a highly crystalline AlN interfacial layer GaN at 330 °C via plasma-enhanced atomic (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as Al N precursors, respectively. The crystallinity mass density examined using X-ray diffraction (XRD) reflectivity (XRR) measurements, respectively, chemical bonding states concentrations determined by photo...

Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and other negative polyelectrolytes, and controlling the diameter and aspect ratio of the pores with near single Ångstrom precision. The control over the chemical and physical nat...