in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

Since the times of the founders of streamer theory — Raether [1], Loeb [2] and Meek [3] — a special attention has been paid to high populated electron avalanches possessing potential to overgrowing into streamers. One of the basic problem that has not been resolved so far concerns anomalous statistical behavior of big avalanches with electron populations n > 10. The mentioned anomaly consists i...

Since avalanche gain and breakdown voltage in most semiconductor materials change with temperature, instruments utilizing Avalanche Photodiodes (APDs) for their avalanche gains need to incorporate either temperature stabilization or voltage adjustment in the APD operation circuits. In this work we evaluated the temperature and temporal stability of avalanche gain in Al0.85Ga0.15As0.56Sb0.44, a ...

Single-photon avalanche diodes (SPADs) are primary devices in photon counting systems used in quantum cryptography, time resolved spectroscopy and photon counting optical communication. SPADs convert each photo-generated electron hole pair to a measurable current via an avalanche of impact ionizations. In this paper, a stochastically self-regulating avalanche model for passively quenched SPADs ...

Avalanche photodiodes (APDs) with thin avalanche regions have shown low excess noise characteristics and high gain-bandwidth products, so they are suited for long-haul optical communications. In this work, we investigated how carrier injection profile affects the avalanche gain and excess noise factors of Al0.85Ga0.15As0.56Sb0.44 (lattice-matched to InP substrates) p-i-n and n-i-p diodes with t...

In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulat...

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

A collective electron transfer (ET) process was discovered by studying the current noise in a field effect transistor with light-sensitive gate formed by nanocrystals linked by organic molecules to its surface. Fluctuations in the ET through the organic linker are reflected in the fluctuations of the transistor conductivity. The current noise has an avalanche character. Critical exponents obtai...

In this work, the discharge dynamics in an atmospheric pressure dielectric barrier discharge (DBD) is studied in a DBD reactor having parallel plate electrodes geometry. The DBD reactor is powered by a 50 Hz ac high voltage power source through a ballast resistor. The images of filaments occurring in the discharge gap are captured using a high speed intensified charge coupled device camera. The...