Individual, strongly electroluminescent Ag(n) molecules (n = 2 approximately 8 atoms) have been electrically written within otherwise nonemissive silver oxide films. Exhibiting characteristic single-molecule behavior, these individual room-temperature molecules exhibit extreme electroluminescence enhancements (>10(4) vs. bulk and dc excitation on a per molecule basis) when excited with specific...

The STM-electroluminescence technique is shown to be a valuable tool for characterizing optoelectronic properties and understanding structure-function relationships in heterogeneous or disordered materials on nanometer length scales. The intensity of photon emission induced by tunneling electrons from rough Au films is found to depend on the surface feature size. This size-dependent photon emis...

We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The Ultrathin gate oxide with thickness 1 3 urn was grown by rapid thennal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of iO, which exce...

We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5× 104 C/cm2 stress. A comprehensive illustration composed of localized...

The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN-Al2O3-MoS2 and GaN...

A detailed model is proposed to explain the electroluminescence spectrum from metal–oxide– silicon tunneling diodes. This model includes phonon-assisted processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination, respectively. With ...

Planar diode structures employing hybrid organic-inorganic methylammonium lead iodide perovskites lead to multifunctional devices exhibiting both a high photovoltaic efficiency and good electroluminescence. The electroluminescence strongly improves at higher current density applied using a pulsed driving method.

Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the t...

Electroluminescence, the emission of light in the presence of an electric current, provides information on the allowed electronic transitions of a given system. It is commonly used to investigate the physics of strongly coupled light-matter systems, whose eigenfrequencies are split by the strong coupling with the photonic field of a cavity. Here we show that, together with the usual electrolumi...

Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb2O3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb3+ ions in Tb2O3. The electroluminescence mechanisms of the Tb2O3 ligh...