In this paper, the analytical solution of an electric and Volterra edge dislocation in a functionally graded piezoelectric (FGP) medium is obtained by means of complex Fourier transform. The system is subjected to in-plane mechanical and electrical loading. The material properties of the medium vary exponentially with coordinating parallel to the crack. In this study, the rate of the gradual ch...

A (linear) nonsingular solution for the edge dislocation in the translational gauge theory of defects is presented. The stress function method is used and a modified stress function is obtained. All field quantities are globally defined and the solution agrees with the classical solution for the edge dislocation in the far field. The components of the stress, strain, distortion and displacement...

Dislocation bias factors in bcc Fe have been calculated based on atomistic interaction energy maps on three kinds of dislocations, namely the a0/2〈111〉{110} screw, a0/2〈111〉{110} and a0〈100〉{001} edge dislocations. The results show that the dislocation bias is higher for the a0/2〈111〉 edge dislocation than for the a0〈100〉 edge dislocation, even though the latter possesses a larger Burgers vecto...

Employing the empirical embedded-atom method potentials, the evolution of edge and screw dislocation core structure is calculated at different hydrogen concentrations. With hydrogen, the core energy and Peierls potential are reduced for all dislocations. A broaden-core and a quasi-split core structure are observed for edge and screw dislocation respectively. The screw dislocation and hydrogen i...

We investigate the T (3)-gauge theory of static dislocations in continuous solids. We use the most general linear constitutive relations bilinear in the elastic distortion tensor and dislocation density tensor for the force and pseudomoment stresses of an isotropic solid. The constitutive relations contain six material parameters. In this theory both the force and pseudomoment stresses are asym...

Self-diffusion along screw and edge dislocations in Al is studied by molecular dynamics simulations. Three types of simulations are performed: with pre-existing vacancies in the dislocation core, with pre-existing interstitials, and without any pre-existing defects (intrinsic diffusion). We find that diffusion along the screw dislocation is dominated by the intrinsic mechanism, whereas diffusio...

The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)5D0x0 /(x0 1x), ...

A mesostructured silica thin film with nanosized voids arranged in a body-centered cubic (bcc) array with a slight distortion was studied by transmission electron microscopy (TEM) for line defects. This film was engineered by a preferential solvent evaporation-induced sol-gel and self-assembly process and subsequent pyrolysis to remove its structure-directing agent. Methyl triethoxysilane [MTES...

Local recombination properties of threading screw and edge dislocations in 4H–SiC epitaxial layers have been studied using electron beam induced current !EBIC". The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombina...