نتایج جستجو برای: drain conditions
تعداد نتایج: 857504 فیلتر نتایج به سال:
An analytic solution is presented describing ̄ow to a drain in a semi-in®nite domain bounded by a leaky layer of constant thickness. The solution is developed by applying the method of images to two parallel boundaries: an inhomogeneity boundary and an equipotential boundary. It is then demonstrated that the solution for the problem with the leaky layer approximated by a leaky boundary (a mixed...
excess pore pressure under seismic loadings has always been a main concern in geotechnical engineering practices. the phenomenon in soil can cause an effective stress and hence cause the shear strength of the soil to decrease considerably and large deformations to occur in the area. generally, increases in pore pressure occur in un-drained conditions. if it is formed, its consequences decrease ...
excess pore pressure under seismic loadings has always been a main concern in geotechnical engineering practices. the phenomenon in soil can cause an effective stress and hence cause the shear strength of the soil to decrease considerably and large deformations to occur in the area. generally, increases in pore pressure occur in un-drained conditions. if it is formed, its consequences decrease ...
The expatriation of the elites has undoubtedly been one of the most crucial national issues of the past two decades. From the early 1960s onward, brain drain has served as a problem, which researchers have studied form different perspectives using various approaches, so much so that giant global organizations such as the World Bank and the UNESCO conducted studies and attempted to offset its ef...
a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...
This paper presents an analytical surface potential model for pocket implanted sub-100 nm nMOSFET. The model is derived by solving the Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model...
Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etc...
estimation of root-zone salinity using saltmod in the irrigated area of kalaât el andalous (tunisia)
in tunisia, kalâat el andalous irrigated district is one of the most affected areas by salinization. the objective of this study was to predict the root zone salinity (over 10 years) in this area using the saltmod simulation model for subsurface drainage system. saltmod is based on water balance, salt balance model, and seasonal agronomic aspects. in the pilot area, irrigated vegetables crops s...
We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the ...
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