نتایج جستجو برای: doping concentration
تعداد نتایج: 403896 فیلتر نتایج به سال:
Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we hav...
This paper investigates the amount of doping concentration in silicon semiconductor using optical principle. Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...
Samples of YBa2Cu3-xAgxOy with x=0, 0.1, 0.15, 0.2, 0.3 and samples of YBa2Cu3-xAlxOy with x=0, 0.01, 0.02, 0.03 and 0.045 are prepared by the sol-gel method. Structural and superconducting properties of samples are studied by electrical resistivity (R-T), X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the samples show transition to superconducting state and the transitio...
The optical properties of p-type AlxGa1−xAs sx=0, 0.01, and 0.16d epitaxial films with different beryllium and carbon doping concentrations s1018–1019 cm−3d were investigated by far-infrared reflectance spectroscopy in the 1.5–15-THz frequency range. The dielectric response functions of the film samples were expressed using the classical Lorentz–Drude model. Optical properties were obtained usi...
Polycrystalline samples of NdBa2-xLaxCu3O7-δ with x=0, 0.05, 0.10, 0.15, 0.20, and 0.30 were made by standard solid state methods. The transport and superconducting properties have been studied by the resistivity measurements as a function of temperature and doping concentration. In order to measurements the hole concentration in CuO2 planes, the room temperature thermoelectric power was measu...
Fictive temperature Tf and fluorine F -doping concentration dependences of self-trapped holes STHs in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation...
The optical properties and thermal conductivity of carbon nanotubes in the presence of Nitrogen doping and electric field investigated via the Green's function method and tight binding approximation. The doping and external fields lead to modifications in the density of state (DOS), optical properties, electrical and thermal conductivity. The band gap decreases by the electric field until reach...
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...
A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electronand hole-initiated multiplication in thin InP p–i–n diodes with a range of multiplication lengths of w = 0.1 and 0.24 lm. This model predicts a reduction in excess noise factor for both electronand hole-initiated multiplication as the d...
In this study polycrystaline samples of Y1-2xCaxThxBa2Cu3O7-δ with x=0, 0.025, 0.05, 0.075 were made by standard solid state methods. The transport and superconducting properties have been studied by the thermoelectric power S(x,T) measurements as a function of temperature and doping concentration. The critical temperature decreased linearly by increasing the doping concentration. S(x,T) was a...
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