Introduction: One of the useful standard quality assurance techniques in radiation therapy is monitoring entrance doses in in-vivo dosimetry. An overall tolerance limit of 5% of the absorbed radiation dose has been recommended by the International Commission of Radiological Units. The implementation of an in vivo dosimet...

introduction: lasers, light emitting diodes (leds) and super luminous diodes (slds) are widely used to treat selected musculoskeletal, integumentary and neurological conditions. the mechanisms underlying the reported treatment effects of light therapy are unclear and the physiologic effect of light on a variety of tissues, particularly neurological, is mostly unknown. a few researchers have rep...

One of the difficulties with PWM switching converters is high switching loss and electromagnetic interference due to switching at non-zero voltage and current, which limits the operating frequency. In order to reduce the converter volume and weight (by increasing the frequency) and reducing switching losses, zero voltage and current switching methods are recommended. In this paper, four main ze...

One of the difficulties with PWM switching converters is high switching loss and electromagnetic interference due to switching at non-zero voltage and current, which limits the operating frequency. In order to reduce the converter volume and weight (by increasing the frequency) and reducing switching losses, zero voltage and current switching methods are recommended. In this paper, four main ze...

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

The switching-rate capability of mm-wave InGaAs PIN diodes of various sizes was evaluated for the first time by measuring their response times under various bias conditions. The dependencies of InGaAs PIN diode switching times are discussed, and the results are correlated with their DC characteristics. InGaAs PIN diodes demonstrated short switching times (fall time τF=250ps and rise time τR=130...

Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1...

Articles you may be interested in Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes J. Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes Appl. Impact...

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...

Rev. Introduction Since the introduction of commercial silicon carbide (SiC) Schottky diodes over 10 years ago, significant improvements in power factor correction (PFC) circuits and motor drives have been realized due to the elimination of minority carrier reverse recovery charge and its resulting switching loss associated with traditional PiN diodes. The early adoption of SiC Schottky diodes ...