In a ring laser gyroscope, due to the rotation and the Sagnac effect, a phase difference between the two counter-propagating beams is generated. In this device, the higher phase difference between these two beams causes the better the interference pattern detection, and thus the sensitivity is increased. In this paper, the effect of inserting a dielectric-graphene photonic crystal inside a ring...

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...

This paper analyzes in detail the Fringing Induced Barrier Lowering (FIBL) in MOS transistors with high-K gate dielectrics using two-dimensional device simulations. We found that the device short channel performance is degraded with increase in gate dielectric permittivity(Kgate) due to an increase in the dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we obse...

In this paper, a power laterally-diffused metal-oxidesemiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is anal...

We present a device and method for performing vector transmission spectroscopy on biological specimens at terahertz (THz) frequencies. The device consists of artificial dielectric birefringence obtained from silicon microfluidic grating structures. The device can measure the complex dielectric function of a liquid, across a wide THz band of 2 to 5.5 THz, using a Fourier transform infrared spect...

We report stereolithographic polymer-based fabrication and experimental operation of a microwave X-band cloaking device. The device is a relatively thin (about one wavelength thick) shell of an air-dielectric composite, in which the dielectric component has negligible loss and dispersion. In a finite band (9.7-10.1 GHz), the shell eliminates the shadow and strongly suppresses scattering from a ...

A high contrast electroluminescent (EL) device structure is presented. The diffuse luminous reflectivity from the metal/dielectric/phosphor/indium-tin-oxide/glass EL device structure is 3%. A Eu-doped GaN phosphor is used to demonstrate the contrast-enhanced operation. Low reflectivity is achieved by inserting a light-absorbing black thick-film BaTiO3 layer between the phosphor and the rear met...

A novel, to our knowledge, device based on a tapered optical fiber with a double-layer deposition including a metallic media is presented, and its properties are studied. The main novelty of the device consists of the introduction of a dielectric layer, whereas the systems depicted in the literature are simply metal-coated tapered fibers. The presence of the dielectric layer permits one to tune...