The study of scanning tunneling microscopy (STM) induced localized dielectric degradation and polarity dependent breakdown (BD) in HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielectric BD events are also analysed using conductive-atomic force microscopy (C-AFM). The ...

In past years, it was known that paint on reflector surfaces causes degradation of antenna gain and noise temperatures, but it was not known how much degradation occurs as a function of paint and primer thickness or frequency. This article presents an approach used to study the properties of paint by first measuring the complex dielectric constants of paint and primers at frequencies of interes...

Leakage current measurements of BaTiO3-based X7R multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) have revealed three distinct failure modes: avalanche breakdown (ABD), thermal runaway (TRA), and slow degradation. Failure analysis (FA) was performed for a number of BME capacitors that failed with the aforementioned three failure modes. The samples that failed with ABD had...

In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the lowtemperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate t...

High vacuum, cold gases and liquids, and solids are the principal insulating materials for superconducting apparatus. All these insulants have been claimed to show fairly good intrinsic dielectric performance under laboratory conditions where small scale experiments in the short term range are typical. However, the insulants must be integrated into large scaled insulating systems which must wit...

The physical properties of γ-ray-irradiated and thermally aged Poly(ether ether ketone) (PEEK) have been investigated. To evaluate the degradation level of PEEK, analyses of the mechanical, electrical, and dielectric relaxation properties were carried out for accelerated-aged PEEK. Studies of the temperature dependency of the dielectric properties indicated that the glass transition temperature...

A comprehensive study of the intrinsic reliability of a 1.4-nm (equivalent oxide thickness) JVD Si3N4 gate dielectric subjected to constant-voltage stress has been conducted. The stress leads to the generation of defects in the dielectric. As the result, the degradation in the threshold voltage, subthreshold swing, gate leakage current, and channel mobility has been observed. The change in each...