نتایج جستجو برای: czochralski technique

تعداد نتایج: 611832  

2003
E. Tuominen

We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be ap...

Journal: :Optics express 2008
Wendy Patterson Stefano Bigotta Mansoor Sheik-Bahae Daniela Parisi Mauro Tonelli Richard Epstein

We report laser-induced cooling with thulium-doped BaY2F8 single crystals grown using the Czochralski technique. The spectroscopic characterization of the crystals has been used to evaluate the laser cooling performance of the samples. Cooling by 3 degrees below ambient temperature is obtained in a single-pass geometry with 4.4 Watts of pump laser power at lambda = 1855 nm.

2011
Xiaofeng Sun Guifu Ding Binhong Li A Abuelgasim K Mallik P Ashburn D M Jordan P R Wilshaw R J Falster H de Groot

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k cm at room temperature. Coplanar w...

2011
S. Y. Lim D. Macdonald

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...

Journal: :Crystal Growth & Design 2022

Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well Czochralski technique. The chemical and structural characterization extracted single crystalline Czochralski-grown specimen yielded a slight variation Si-Pd ratio along growth direction confirms existence finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. thorough physical carried out o...

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