Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight ca...

Carbon Nanotube FET technology is a new promising technology for high speed digital applications. This paper investigates optimizing Analog Circuits architecture to take advantage of this technology in mixed mode ICs and point at the optimum topology for CNFETs for the first time. It was found through simulations that the optimum topology for high-bandwidth analog circuits is obtained by using ...

This paper presents 1-bit full adder cell in emerging technologies like FinFET and CNFET that operates in the moderate inversion region for energy efficiency, robustness and higher performance. The performance of the adder is improved by the optimum selection of important process parameters like oxide and fin thickness in FinFET and number of carbon nanotubes, chirality vector and pitch in CNFE...

This paper presents a hybrid CMOS-CNFET voltage controlled oscillator (VCO) with low power dissipation and linear response over a wide control voltage range. The hybrid circuit is based on PTM 32nm low power CMOS devices and 32nm CNFET devices with different threshold voltages. The VCO frequency and power dissipation are investigated for CNFET parameters such as number of nano-tubes, gate oxide...

As a potential alternative to the complementary metal-oxide semiconductor (CMOS) technology, many researchers are focusing on carbon-nanotube field-effect transistors (CNFETs) for future electronics. However, existing studies report the advantages of CNFETs over CMOS at the device level by using small-scale circuits, or over outdated CMOS technology. In this paper, we propose a methodology of a...

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometrydependent threshold voltage is one of the CNFET characteristics, which is used in the proposed design. In this paper, we present a novel high speed Adder-subtractor cell using CNFETs based on XOR gates and multiplexer. Presented design uses fourteen transistors, ten for full ...

By scaling down the feature size of CMOS technology deeply in nanoranges, many problems and challenges, such as short channel effects, will restrict its usefulness for the near future robust and energy efficient applications. The CNFET nanodevice seems to be a feasible alternative for bulk CMOS due to its unique electrical properties and similarities with MOSFET. In this paper, efficient CNFET-...

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications has been explored. This paper proposes a novel four quadrant analog multiplier design using CNFETs. The simulation based on 32nm CNFET technology shows that t...

Carbon Nanotube Field Effect Transistors (CNFETs) are being widely studied as the possible alternatives to the conventional silicon-MOSFETs. In this paper we have successfully designed the CNFET-based digital logic gates and compared them with the existing CMOS technology based logic gates. The designs are modeled using 32-nm technology for both CNFET and CMOS technology, using Stanford Univers...

This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divi...