This work presents a micromachined RF-CMOS transformer fabricated in a commercially available 0.18μm CMOS process. Maskless micromachining post-processing is used to remove oxide and substrate material from around the transformer, reducing parasitic effects and improving the performance of the transformer. Index Terms — baluns, CMOS integrated circuits; MEMS, maskless micromachining, Q enhancem...

The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in de...

due to the high density and the low consumption power in the digital integrated circuits, mostly technology of cmos is used. during the past times, the metal oxide silicon field effect transistors (mosfet) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. b...

Emerging non-volatile memory (NVM), or memristive, devices promise energy-efficient realization of deep learning, when efficiently integrated with mixed-signal integrated circuits on a CMOS substrate. Even though several algorithmic challenges need to be addressed to turn the vision of memristive Neuromorphic Systems-on-a-Chip (NeuSoCs) into reality, issues at the device and circuit interface n...

Abstract On-chip electrostatic discharge (ESD) protection circuits had been built in IC chips to protect the devices and circuits against ESD damage. But, ESD protection circuits constructed with the scaled-down CMOS devices are very weak to ESD stress. Therefore, novel ESD protection solutions must be developed to overcome this reliability challenge for integrated circuits fabricated in the na...