We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried...

One of the most important reasons for damages during earthquakes is the liquefaction of loose and saturated sand soils. However, in many regions with proper soil specifications, the large settlements have been observed in the ground surface. Loose sand layers buried in fine soils are one of the cases which may result in these problems and as a weak point during earthquake can cause this phenome...

In this paper, we report a new collector-up npn heterojunction bipolar transistor (C-up HBT) which employs a p-type doping buried layer inserted between extrinsic emitter and subemitter for current confinement. A theoretical study is performed to verify the functionality of the p-type doping buried layer using a two-dimensional device simulator. The structural parameters of the device and bias ...

We report on the design, simulation and test of Low Gain Avalanche Diodes (LGADs) which utilize a buried gain layer. The layer is formed by patterned implantation 50-micron thick float zone substrate wafer-bonded to low resistivity carrier. This then followed epitaxial deposition ≈ 3 micron-thick high amplification region. topside processed with junction edge termination guard ring structures i...

We have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy ~DLTS! and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode ~CC-TATS!. We show that CC-TATS is a more reliable method than DLTS for characterization of the hea...

1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750 “C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750°C. Prolonged annealing at 750 “C caused blistering of the copper layer over the buried carbon. After removal of the blistered ...

The scattering of waves by a buried object is often obscured by the clutter around it. Such clutter can be attributed to the scattering by random rough surfaces and random discrete scatterers. Recent studies show that, because of the memory effect, the angular correlation function can suppress the effects of clutter and make the scattering by the buried object more conspicuous. In this paper, w...

A charge injection device has been realized in which charge can be injected on to an MOS-capacitor from a buried layer via an isolated transfer layer. The cell is positioned vertically between word and bit line. LOCOS (local oxidation) is used to isolate the cells and (deep) ion implantation to realize the buried bit line and transfer layer. This isolation prevents carriers from diffusing to ne...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...