a simple chemical vapor deposition technique at atmospheric pressure (apcvd) is adopted to synthesize the aligned arrays of functionalized multi-walled carbon nanotubes (amwcnts) without using any carrier gas, at 230◦c, 750◦c and 850 ◦c. camphor (c10h16o) is used as carbon source because this botanical hydrocarbon is chip and abundant which convert the cvd technique to a green method for produc...

chemical vapor deposition (cvd) is one of the most popular methods for producing carbon nanotubes (cnts). the growth rate of cnts based on cvd technique is investigated by using a numerical model based on finite volume method. inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal cvd reactor at atmospheric pressure. in thi...

Chemical Vapor Deposition (CVD) is one of the most popular methods for producing Carbon Nanotubes (CNTs). The growth rate of CNTs based on CVD technique is investigated by using a numerical model based on finite volume method. Inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal CVD reactor at atmospheric pressure. In thi...

Measurements of species concentrations and temperature are performed in the boundary layer of an atmospheric DC plasma assisted chemical vapor deposition (CVD) system. Broadband ultraviolet absorption spectroscopy is employed to measure absolute number density of C2 and CH radicals. Stark broadening of Hβ emission is utilized to determine the electron number density inside the boundary layer. T...

The growth rate and uniformity of Carbon Nano Tubes (CNTs) based on Chemical Vapor Deposition (CVD) technique is investigated by using a numerical model. In this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal CVD reactor at atmospheric pressure. Based on the gas phase and surface reactions, released carbon...

An innovative atmospheric pressure chemical vapor deposition method toward the deposition of polymeric layers has been developed. This latter involves the use of a nanopulsed plasma discharge to initiate the free-radical polymerization of an allyl monomer containing phosphorus (diethylallylphosphate, DEAP) at atmospheric pressure. The polymeric structure of the film is evidence by mass spectrom...

The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 and VOCl3 with cyclohexylphosphine at substrate temperatures of 600 C deposits thin films of amorphous vanadium phosphide. The films are black/gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 C – 600 C deposits films of crystalline -MP ...

The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800Torr and under 250 1C. A film resistivity of 3 10 2 O cm and a transparency of 95% from 375 to 2500 nm was obtained for deposition at 20mTorr diethylzinc, 1.0 Torr CO2, 799Torr He, a TMAl/DEZn ratio of 1:100, 41W=cm RF power, and 225 1C. The average aluminum concentration in...

the growth rate and uniformity of carbon nano tubes (cnts) based on chemical vapor deposition (cvd) technique is investigated by using a numerical model. in this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal cvd reactor at atmospheric pressure. based on the gas phase and surface reactions, released carbon...