Early experiments have determined that the gallium and antimony diffusivities in gallium antimonide are similar, whereas recent more precise studies demonstrate that gallium diffuses up to three orders of magnitude faster than antimony. In the present study using electronic structure calculations we predict the concentrations and migration enthalpy barriers of important defects in gallium antim...

Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

Session F. Silicon Carbide: Processing Session L. Nitrides: Transport and Devices Session R. Epitaxy: Metamorphic/Strain Session Y. Epitaxy: Arsenide Nitrides Session D. Antimonide-Based Materials and Devices I Session J. Antimonide-Based Materials and Devices II Session P. Quantum Wells and Superlattices Session E. Materials Integration: Wafer Bonding and Alternative Substrates I Session K. Ma...

The epitaxial growth of antimonide-based nanowires has become an attractive subject due to their interesting properties required for various applications such as long-wavelength IR detectors. The studies conducted on antimonide-based nanowires indicate that they preferentially crystallize in the zinc blende (ZB) crystal structure rather than wurtzite (WZ), which is common in other III-V nanowir...

We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of 5.3 10 cm . Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent valu...

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution an...