Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regi...

Articles you may be interested in Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer Appl. Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon ...

Using a masked hydrogen plasma treatment to spatially control the crystallization of amorphous silicon to polycrystalline silicon in desired areas, amorphous and polycrystalline silicon thin-film transistors (TFTs) with good performance have been integrated in a single film of silicon without laser processing. Both transistors are top gate and shared all process steps. The polycrystalline silic...

Recent research on the electrochemical lithiation of amorphous silicon nanoparticles shows that amorphous silicon is more fracture resistant than crystalline silicon during lithiation. Nanoparticles of amorphous silicon can be lithiated and delithiated without any fracture at all. To fully exploit the potential of using amorphous silicon as electrodes for lithium ion batteries it is important t...

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...

In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanis...

Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...

Selective exposure of a hydrogenated amorphous silicon ~a-Si:H! film to a room-temperature hydrogen plasma using a patterned masking layer and a subsequent anneal at 600 °C, results in patterned polycrystalline and amorphous silicon regions. However, most of the hydrogen in the amorphous silicon is lost, leading to severe degradation in its properties. In this letter, we report the rehydrogenat...

In this study, we made the heterojunction solar cells on Si substrate by fabricating a nanocrystalline Si/SiO2 superlattice emitter structure. Amorphous silicon and silicon dioxide superlattice were prepared by rf Si sputtering and plasma oxidation, respectively. The deposited amorphous silicon was crystallized at high temperature. Microstructure studies by TEM show that amorphous silicon was c...