An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large ra...

Thermal transport plays a crucial role in performance and reliability of semiconductor electronic devices, where heat is mainly carried by phonons. Phonon transport in crystalline semiconductor materials, such as Si, Ge, GaAs, GaN, etc, has been extensively studied over the past two decades. In fact, study of phonon physics in crystalline semiconductor materials in both bulk and nanostructure f...

The optical properties of 1-methyl-1,2,3,4,5-pentaphenylsilole thin films grown on silicon substrate were investigated using spectroscopic ellipsometry ~SE!. Accurate refractive index n and extinction coefficient k, in the wavelength range of 250 to 800 nm, were determined. Sellmeier equations, amorphous semiconductor model, and a three-oscillator classical Lorentz model were used to fit the da...

Abstract A comprehensive overview of density functional theory simulations of high-k oxide/III-V semiconductor interfaces is presented. The methodologies of realistic amorphous high-k oxide generation by hybrid classical-DFT molecular dynamics are compared. The simulation techniques, oxide/semiconductor model designs and rules for formation of unpinned high-k oxide/semiconductor interfaces are ...

The simplest semiconductor junction that is used in solar cells for separating photogenerated charge carriers is the p-n junction, an interface between the p-type region and ntype region of one semiconductor. Therefore, the basic semiconductor property of a material, the possibility to vary its conductivity by doping, has to be demonstrated first before the material can be considered as a suita...

Articles you may be interested in Fully complementary metal-oxide-semiconductor compatible nanoplasmonic slot waveguides for silicon electronic photonic integrated circuits Appl. Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy Monolithically integrated low-loss silic...

semiconductor nanoparticles exhibit size dependent properties due to quantum confinement effect that arenot present in their bulk counterparts. in this work, extremely fine and pure sno2 nanoparticles of ~1.1nm size were synthesized by a solution process, in which amorphous precipitate of sno2 was crystallizedby microwave heating. the particles sizes varied from ~1.1 to ~2.7 nm. by xrd analysis...