Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

The use of fossil fuels to generate electricity has already been identified as a major contributor to global warming and climate change. Many countries have already made plans to reduce their fossil fuel consumption and increased the contribution of renewable energies in total energy supply. One of the commonly used renewable energy sources is the sun and the use of photovoltaic cells to conver...

The ability of amorphous intergranular films to mitigate damage formation at grain boundaries is studied with molecular dynamics simulations. We find that such films can alter both crack nucleation and crack growth rates by efficiently absorbing dislocations, with thicker films being more effective sinks. Local plastic strain brought by incoming dislocations is diffused into a triangular region...

Molecular dynamics simulations are used to examine the nanometer-scale indentation of a thin film of amorphous carbon with a nonrigid sp bonded carbon tip. The simulations show in detail the atomic-scale mechanism of the indentation process and compare the bonding character of the film before and after indentation. The computationally determined elastic modulus of the amorphous-carbon film is f...

Recently amorphous MoS2 thin film has attracted great attention as an emerging material for electrochemical hydrogen evolution reaction (HER) catalyst. Here we prepare the amorphous MoS2 catalyst on Au by atomic layer deposition (ALD) using molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (CH3S2CH3) as Mo and S precursors, respectively. Each active site of the amorphous MoS2 film effect...

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...

Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate gl...