The electrical characteristics of power MOSFETs additionally implanted with nitrogen ions have been studied. Ion implantation was carried out through a protective oxide 23 nm thickness energies 20 and 40 keV doses 1 ⋅ 1013‒5 1014 cm–2. Rapid thermal annealing at temperature 900 or 1000 °C for 15 s. It has established that nitridisation the gate dielectric makes it possible to reduce noise leaka...