We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be ap...

We report laser-induced cooling with thulium-doped BaY2F8 single crystals grown using the Czochralski technique. The spectroscopic characterization of the crystals has been used to evaluate the laser cooling performance of the samples. Cooling by 3 degrees below ambient temperature is obtained in a single-pass geometry with 4.4 Watts of pump laser power at lambda = 1855 nm.

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k cm at room temperature. Coplanar w...

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...

Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well Czochralski technique. The chemical and structural characterization extracted single crystalline Czochralski-grown specimen yielded a slight variation Si-Pd ratio along growth direction confirms existence finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. thorough physical carried out o...