Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron...

Direct quantitative 2-D characterization of sub-50 nm MOSFETs continues to be elusive. This research develops a comprehensive indirect inverse modeling technique for extracting 2-D device topology using combined log(I)-V and C-V data. An optimization loop minimizes the error between a broad range of simulated and measured electrical characteristics by adjusting parame-terized profiles. The extr...

Here we report designs for performance improvements of homojunction interfacial workfunction internal photoemission (HIWIP) detectors for di€erent far infrared regions. A design is given to reduce dark current to about 10 e/s for a 300 lm cut-o€ detector at 1.3 K, at a bias ®eld of 500 V/cm by adjusting the thickness of the intrinsic layer to eliminate tunneling component. The intrinsic region ...

MOSFET scaling and performance has progressed rapidly in recent years, with physical gate lengths for electrostatically sound devices reaching 30 nm or below: near the prospective scaling limits for traditional bulk MOSFETs. This work investigates several key issues for this "end of roadmap" regime. Focus is on understanding the limitations to carrier velocity in MOSFET inversion layers as chan...

Lighting is a big business, lighting consumes considerable amount of the electricity. These facts motivate for the search of new illumination technologies that are efficient. Semiconductor light emitting diodes (LEDs) have huge potential to replace the traditional primary incandescent lighting sources. They are two basic types of semiconductor LEDs being explored: inorganic and organic semicond...

When a low-energy electron is incident on an interface between a metal and superconductor, it causes the injection of a Cooper pair into the superconductor and the generation of a hole that reflects back into the metal—a process known as Andreev reflection. In confined geometries, this process can give rise to discrete Andreev bound states (ABS), which can enable transport of supercurrents thro...

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

We show that a fi eld emission tip electron source that is triggered with a femtosecond laser pulse can generate electron pulses shorter than the laser pulse duration (100  fs). The emission process is sensitive to a power law of the laser intensity, which supports an emission mechanism based on multiphoton absorption followed by over-the-barrier emission. Observed continuous transitions betw...

1. Abstract We have studied the statistical variability (SV) in thinbody silicon-on-insulator (TBSOI) MOSFETs with high-κ/metal gate stacks. We have considered the impact of the gate workfunction variation (WFV) in conjunction with random discrete dopants (RDD) and trapped interface charges. The simulations were carried with the Glasgow 3D ’atomistic’ simulator GARAND. Results for both threshol...

DOI: 10.1002/aelm.201600318 structurally stable and largely lack dangling bonds. The production processes of TMDs are currently well established, ranging from top-down exfoliation of the bulk material using mechanical exfoliation, solution-based approaches and the bottom-up synthesis methods using chemical vapor deposition.[7,8] TMDs have gained significant importance as excellent candidates fo...