نتایج جستجو برای: transistor characteristic
تعداد نتایج: 193247 فیلتر نتایج به سال:
Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 , ’s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Convent...
We investigate heat transport through an assembly consisting of a two-level system coupled between two harmonic oscillators, which is described by the quantum Rabi model, as prototype nanoscale devices using controllable multi-level systems. Using noninteracting-blip approximation (NIBA), we find that linear thermal conductance shows characteristic temperature dependence with two-peak structure...
The poor interface quality of the Silicon Carbide/oxide (SiC/SiO2) severely degrades electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved with stress engineering, well-established technique for performance enhancement low silicon (Si) transistor technology. Process si...
Abstract Threading dislocations in the AlGaN-barrier of four pairwise differently grown AlGaN/GaN high electron mobility transistor structures on Si were investigated with respect to their structural and electrical properties direct comparison simultaneously ensuring statistical significance results. Portions pure screw mixed type observed serve as leakage current paths be clearly dependent gro...
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and...
The present contribution analyzes the influence of a type of algebraic nonlinearity in the circuit implementation of the Rossler system, on the nonlinear dynamics of this chaotic generator. The analogue multiplier, imposed by the nonlinearity in the Rossler state equations, is implemented using a bipolar junction transistor Gilbert cell. Its nonlinear input-output characteristic is reviewed, th...
To understand the electrical behavior of a photovoltaic panel, it is necessary to know characteristic I pv = f(V ). The best way obtainthis I-V curve use variable resistor. This paper proposes new and simple technique based on MOSFET transistor as load, which whose gate voltage controlled by an RC filter from Arduino. A comparison under standard temperature illumination conditions between manuf...
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