Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

A microfluidic reactor for synthesizing cadmium selenide (CdSe) quantum dots (QDs) was synthesized out of a silicon wafer and Pyrex glass. Microfabrication techniques were used to etch channels into the silicon wafer. Holes were wet-drilled into the Pyrex glass using a diamond-tip drill bit. The Pyrex wafer was anodically bonded to the etched silicon wafer to enclose the microfluidic reactor. C...

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implem...

This article briefly elaborated the basic concepts of the probe vacillated at testing a large silicon wafer with square four point probe equipment. The importance of the micro-area’s sheet resistance is discussed and the basic principles of four point probe measurement technology are analyzed. Some factors that affect the measurement accuracy are studied, and interference can be avoided while m...

1D nanochannels are fabricated by direct bonding of a silicon wafer, containing nanochannels, microchannels and access holes with a 170 μm thick and 100 mm diameter glass wafer. The thin glass wafers are used as channel covers because of their appropriate thickness for use with coverglass corrected water immersion lenses. As the nanochannel chips are used on an inverted microscope, access holes...

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does no...