Radial core/shell nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring fundamental electronic properties and realizing novel device applications at the nanoscale. Here, we report the synthesis of crystalline silicon/amorphous silicon (Si/a-Si) core/shell NWs and studies of crossed Si/a-Si NW metal NW (Si/a-Si x M) devices and arrays....

PROPERTIES AND DEVICE APPLICATIONS OF SILICON AND SILICON-GERMANIUM NANOSTRUCTURES WITH DIFFERENT DIMENSIONS by Han-Yun Chang Defect-free crystalline Si/SiGe(Ge) nanostructures are demonstrated despite the 4% lattice mismatch between Si and Ge. The lattice mismatch-induced strain is sufficiently relaxed through the designed, cluster morphology, or nanowire (NW) structures. Future device applica...

Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW chan...

Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...

Recently, in accordance with the demand for development of low-power semiconductor devices, a negative capacitance field-effect-transistor (NC-FET) that integrates ferroelectric material into gate stack and utilizes capacitive behavior has been widely investigated. Furthermore, gate-all-around (GAA) architecture to reduce short-channel effect is expected be applied after Fin-FET technology. In ...

Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current $(I_{\mathrm{ off}})$ <...

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density. Keywords—Gate-all-around, temperature dependence, silicon nanowire

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

Ganoderma lucidum is a medicinal fungus whose numerous triterpenoids are its main bioactive constituents. Although hundreds of have been identified, triterpenoid glycosides, also named saponins, rarely found. Ganoderic acid A (GAA), major triterpenoid, was synthetically cascaded to form GAA-15-O-?-glucopyranoside (GAA-15-G) by glycosyltransferase (BtGT_16345) from Bacillus thuringiensis GA A07 ...