Different kinds of freezing-point regulators were evaluated to expand the freezing point zone of large yellow croaker, and several treatment methods such as ordinary atmospheric pressure, vacuum environment and injection during the process of penetration were compared to reveal the relationship of diffusion velocities, diffusion time and freezing point of the large yellow croaker. Results obtai...

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution an...

The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5 microm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controll...

In this study, we investigated defect detection in dissimilar welded joints by the acoustic emission (AE) method. The study objects were carbide and decarburized interlayers, which are formed at fusion boundary between austenitic pearlitic steels. Diffusion as a structural defect, usually have microscopic dimensions cannot be detected using conventional non-destructive testing (NDT) methods. re...

We report experiments on defect-tracking in the state of undulation chaos observed in thermal convection of an inclined fluid layer. We characterize the ensemble of defect trajectories according to their velocities, relative positions, diffusion, and gain and loss rates. In particular, the defects exhibit incidents of rapid transverse motion which result in power law distributions for a number ...

Reduced thermal budget is required for back-end-of-line (BEOL) integration of application specific functionality into the multilevel metal stack a processor “substrate.” We report 400 °C BEOL-compatible Ge-on-Si growth (LT Ge) that epitaxial and single crystalline with defect density similar to high temperature small 0.05% tensile strain. Room methanol–iodine passivation employed pre-growth in ...