–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

Knockout reactions using light nuclear targets, e.g., Be or C, have proven in the past to be very useful in gaining information on the wave function of the valence nucleons. However, the strong absorption concentrates the reaction probability at the surface. Similar arguments hold for transfer and Coulomb break-up reactions. Nucleon knockout reactions using protons, on the other hand, allow one...

Wavelet theory has emerged as a new mathematical tool that can be applied in many fields such as image processing, biomedical engineering, radar, physics, control systems and communication systems. The important area of application of wavelets in communication: multiple accesses. Among the multiple access applications one of the most notable work is wavelet packet-based multiple access communic...

We observe deteriorated IV, leakage-to-voltage, characteristics when the ATLAS SemiConductor Tracker (SCT) silicon microstrip detector is biased at a fixed voltage Vk for a long period. The leakage current is nearly halved at voltages below Vk. The noise figure is deteriorated and signal charge spreads to neighboring strips. The detector performance is, however, not degraded when biased at or a...

The potential of Silicon Carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. In fact, the first SiC neutron detector was demonstrated more than fifty years ago (Babcock, et al., 1957; Babcock & Chang, 1963). This detector was shown to be operational in limited testing at temperatures up to 700 oC. Unfortunately, further development was limited by the poo...

K-shell fluorescence yields of low, medium Z and rare earth elements were determined using Si(PIN) detector and HPGe detector employing reflection geometry set up. Target atoms were excited using 59.5 keV gamma rays emerging from Am-241 source of strength 300 mCi. Background radiation and multiple scattering effects were minimized by properly shielding the detector. The elemental foils of unifo...