Simulation and realization of an active metamateial cell are presented. This metamaterial cell has a power loss due to resistance in the coils. This paper presents a new nanometer negative resistance MOSFET (NR-MOSFET), which is used as a controllable negative resistance to compensate for the nanometer metamaterial losses. The negative resistance was about −320 Ω. A form of a lumped circuit mod...

We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I-V data, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement...

The approaching end of traditional MOSFET technology scaling creates the need to identify novel devices, manufacturing technologies, memories, and architectures to preserve digital computing performance scaling. To this end, we argue for the need to generate circuit-level models and integrate them into existing simulation and digital design infrastructure for rapid architectural design explorat...

Circuit-performance implications for double-gate MOSFET scaling in the sub-25 nm gate length regime are investigated. The optimal gate-to-source/drain overlap needed to maximize drive current is found to be different than that needed to minimize FO-4 inverter delay due to parasitic capacitances. It is concluded that the effective channel length must be slightly larger than the physical gate len...

We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...

SIGMA Adequate and understandable MOSFET models are presently a must for the design of integrated circuits. Most of the existing MOSFET models, however, are too complex andor do not comply with basic principles of physics. We propose here the use of ACM model, a very simple transistor model, together with a set of easily implemented experiments to determine the ACM parameters for the training o...

A novel reconfigurable hybrid single electron transistor/MOSFET (SETMOS) circuit architecture, namely, reconfigurable pseudo-NMOS-like logic is proposed. Based on the hybrid SETMOS inverter/buffer circuit cell, reconfigurable pseudo-NMOS-like logics that can work normally at room temperature are constructed. This kind of reconfigurable logic can implement up to 2n sorts of functions at n inputs...

As MOSFET sizes and wire widths become very small in recent years, influence of resistive component of interconnects on the estimation of propagation delay and power dissipation can no longer be neglected. In this paper we present a short-circuit power dissipation formula for static CMOS logic gates driving a CRC load. By representing the short-circuit current and the current flowing in the res...

New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a threedimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties and three-dimensional thermal equivalent network is used for simulation of multipulse unclamped indu...

As a wide bandgap power electronics device, the SiC MOSFET has lot of advantages over traditional Si IGBT. Replacing IGBT with in existing converter is an effective means to improve performance and promote upgrading converter. Generally, order make full use its MOSFET, circuit cannot be simply replaced by but main driver need redesigned because oscillation problem cross-talk caused parasitic pa...