1) Molecular and Cellular Neurobiotechnology, Institute of Bioengineering of Catalonia and Department of Cell Biology, University of Barcelona, Baldiri Reixac 15-21, 08028 Barcelona, Spain. 2) Institute of Neuropathology (INP), IDIBELL-Hospital Universitari de Bellvitge, Faculty of Medicine, University of Barcelona, 08907 Hospitalet de LLobregat, Spain. 3) Centro de Investigación Biomédica en R...

Around forty years passed from the beginning of operation of the first electron-positron colliding beam facility VEPP-2 in Institute of Nuclear Physics (INP), Novosibirsk. Here I described development of electron-positron colliding beam project in INP, as well as advance of similar projects of the first generation at LAL, Orsay and at LNF, Frascati.

We present a photoemission study of the electronic properties of organic-inorganic semiconductor heterojunctions formed between the two hole transport materials, N,N8-diphenyl-N, N8-bis~1-naphthyl!-1-18biphenyl-4,49diamine ~a-NPD! and copper-phthalocyanine ~CuPc!, and InP~110!. The highest occupied molecular orbital of a-NPD ~CuPc! is found to be 0.2 eV below ~0.2 eV above! the InP valence band...

ZIRNGIBL. M., DRAGONE, c., and JOYNER. c.H.: ‘Demonstration of a 15 X 15 arrayed waveguide multiplexer on InP’, IEEE Photonics Technol. Lett., 1992, 4, (1 I ) , pp. 1250-1253 VERBEEK, B.H., STARING, A.A.M., JANSEN, E.J., VAN-ROUEN, R., BINSMA, J..I.M., VAN-DONGEN, T., AMERSFOORT, M.R., VAN-DAM, C., and SMIT, M.K.: ‘Large bandwidth polarisation independent and compact eight channel PHASAR demult...

Uniform arrays of nano-sized pore produced in porous alumina were transferred into InP substrates by inductively coupled plasma reactive ion etching (ICP-RIE). We observed a significant enhancement in the light output from InP substrate with nanohole arrays on the surface. Photoluminescence intensity of triangular arrays of air cylinders on InP substrate showed an enhancement up to 3 times comp...

This paper presents a study on the effect of matrix material on the morphology and optical properties of self-assembled InP-based InAsSb nanostructures. Due to the differences in surface roughness of the growth front, In0.53Ga0.47As matrix layer induces the formation of short quantum dashes QDashes and elongated quantum dots, while InP and In0.52Al0.48As matrix layers promote the formation of l...

This research scrutinizes the impact of plane strain on optical characteristics Indium Phosphide (InP) employing first-principles methodology, grounded Density Functional Theory (DFT). The findings suggest that peaks spectral response curves dielectric function, refractive index, extinction coefficient, absorption and reflection coefficient InP, when subjected to tension strain, shift towards l...

We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.060.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature photoluminescence measurements in zero magnetic field are used to show that, in each case, only one layer of dots ...

High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications Himanshu Kataria TRITA-ICT/MAP AVH Report 2014:13; ISSN 1653-7610; ISRN KTH/ICT-MAP/AVH-2014:13-SE ISBN 978-91-7595-289-5 Abstract This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) ...

Graphene (Gr) is of great interest in the development new electronic, photonic, and composite materials. The physical properties Gr can vary depending on number layers, this unique property makes it a potential material for different electronic applications. In study, few-layer graphene (FLG) film was spin-coated onto InP semiconductor surface FLG/n-InP Schottky contact produced. quality FLG na...