Fluorinated polyimide can potentially replace TEOS as an interlevel dielectric in future ULSI interconnect technologies because its lower dielectric constant offers reduced crosstalk, signal propagation delay, and dynamic power dissipation. One issue associated with polyimides is the anisotropy in dielectric constant, where the smaller out-of-plane dielectric constant, typically measured using ...

Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The effects of plasma expos...

This paper shows how the dielectric constant of alumina and rutile substrates at microwa e frequencies can be accurately determined by fitting the simulated S-parameter spectra of microstrip ring ( ) resonators, generated ia the finite-difference time-domain FDTD method, to experimentally measured data. The proposed method does not require the determination of the effecti e dielectric constant ...

HHigh-k LaAlO3 (LAO) thin films with and without Al2O3 buffer layers were deposited on n-type silicon substrates using a pulsed laser deposition method. The dielectric constant of the LAO thin film increased from 5.2 to 23.1 as its thickness increased from 20 to 500 Å. The effective dielectric constants of the LAO (120 Å)/Si and LAO(105 Å)/Al2O3(15 Å)/Si were 12.5 and 23.2, respectively. The fl...

The development of numerical techniques now permits us to analyze complex structures such as dielectric resonator filters and planar passive elements for coplanar monolithic microwave integrated circuits. In this paper, we describe a novel method for designing dielectric resonator filters. Then a Chebychev band pass filter is designed by coaxially placing high-Q TM01Q dielectric resonators ...

The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor ~MOS! gate stacks was explored. Metal work functions on high-k dielectrics are observed to differ appreciably from their values on SiO2 or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtaine...

The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are ...

A comprehensive study on the ternary dielectric, LaGdO₃, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, resp...

Monodomain and periodically poled LiNbO3 crystals (congruent composition) show dielectric and piezoelectric resonances between 100 K and 900 K. Dielectric measurements show resonances in some samples between 10-100 kHz. These resonances vanish under thermal anneal in monodomain crystals while they remain stable in periodically poled samples with high domain wall densities. The low activation en...

Dielectric measurements of lanthanum modified lead titanate ceramics were carried out in a frequency and temperature range of 70 × 10 Hz – 2 × 10 Hz and 300 K 420 K, respectively. Dielectric relaxation appears around 7 × 10 Hz at room temperature, and the maximum of the dielectric relaxation was around 393 K, the transition temperature (T c ). The relaxation frequency passes through a minimum a...