نتایج جستجو برای: ferroelectric thin films

تعداد نتایج: 187524  

Journal: :Scientific reports 2016
Yoon-Young Choi Sheng Tong Stephen Ducharme Andreas Roelofs Seungbum Hong

A charge gradient microscopy (CGM) probe was used to collect surface screening charges on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] thin films. These charges are naturally formed on unscreened ferroelectric domains in ambient condition. The CGM data were used to map the local electric current originating from the collected surface charges on the poled ferroelectric domains in th...

2015
Zhen HUANG

The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoel...

2007
Z. Yuan C. L. Chen J. C. Jiang

Ferroelectric BaTiO3 BTO thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. ...

Journal: :Physical review letters 2012
Dan Daranciang Matthew J Highland Haidan Wen Steve M Young Nathaniel C Brandt Harold Y Hwang Michael Vattilana Matthieu Nicoul Florian Quirin John Goodfellow Tingting Qi Ilya Grinberg David M Fritz Marco Cammarata Diling Zhu Henrik T Lemke Donald A Walko Eric M Dufresne Yuelin Li Jörgen Larsson David A Reis Klaus Sokolowski-Tinten Keith A Nelson Andrew M Rappe Paul H Fuoss G Brian Stephenson Aaron M Lindenberg

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond time scales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free ch...

Journal: :Nanotechnology 2010
Yachin Ivry D P Chu Colm Durkan

We used enhanced piezo-response force microscopy (E-PFM) to investigate both ferroelastic and ferroelectric nanodomains in thin films of the simple multi-ferroic system PbZr(0.3)Ti(0.7)O(3) (PZT). We show how the grains are organized into a new type of elastic domain bundles of the well-known periodic elastic twins. Here we present these bundle domains and discuss their stability and origin. Mo...

Journal: :Physical review letters 2008
D Lebeugle D Colson A Forget M Viret A M Bataille A Gukasov

Bismuth ferrite, BiFeO3, is the only known room-temperature magnetic ferroelectric material. We demonstrate here, using neutron scattering measurements in high quality single crystals, that the antiferromagnetic and ferroelectric order parameters are intimately coupled. Initially in a single ferroelectric state, our crystals have a canted antiferromagnetic structure describing a unique cycloid....

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2012
R Gaynutdinov S Yudin S Ducharme V Fridkin

It is well known that there are two possible switching mechanisms in ferroelectric crystals and films (see, e.g., Tagantsev et al 2010 Domains in Ferroic Crystals and Thin Films (Berlin: Springer)). The first mechanism, which follows from the mean-field theory of Landau-Ginzburg, is a homogeneous one and does not connect domains. This mechanism was never observed before 1998. The second mechani...

2006
N. Ortega P. Bhattacharya R. S. Katiyar P. Dutta A. Manivannan M. S. Seehra I. Takeuchi S. B. Majumder

In the present work we report multiferroic behavior in lead zirconate titanate PZT –cobalt iron oxide CFO composite thin films. It is found that upon annealing, the multilayered structures are intermixed at least partially, and CFO is phase separated into PZT matrix to form a composite film. The phase separation behavior has been characterized by x-ray photoelectron spectroscopy depth profiling...

Journal: :Nanotechnology 2009
W Y Fu Z Xu L Liu X D Bai E G Wang

Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-defined memory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO) memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFET memories by assembling two top gates on individual nanotubes coated with ferroelectric thin films. Each bit of the nanotube transistor memor...

2012
A. Saif Z. A. Z. Jamal Z. Sauli P. Poopalan

The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been stud...

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