Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37 C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film tran...

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still...

The gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regimes of operation. Analysis of experimental data for different transistors indicates that the noise spectrum is dominated by the channel noise rather than noise originated in series resistors. The obtained results shed new light on...

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Co...

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs ...

We have studied the high frequency performance limits of single-walled carbon nanotube (SWNT) transistors in the diffusive transport regime limited by the acoustic phonon scattering. The relativistic band structure of single-walled carbon nanotubes combined with the acoustic phonon scattering provides an analytical model for the charge transport of the radio frequency transistors. We were able...

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Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfectio...