نتایج جستجو برای: effect transistors
تعداد نتایج: 1652097 فیلتر نتایج به سال:
it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...
growing demands and requires of high data rate systems cause significant increase of high frequency systems for wideband communication applications. as mixers are one of the main blocks of each receivers and its performance has great impact on receiver’s performance; in this thesis, a new solution for ku-band (12-18 ghz) mixer design in tsmc 0.18 µm is presented. this mixer has high linearity a...
due to the high density and the low consumption power in the digital integrated circuits, mostly technology of cmos is used. during the past times, the metal oxide silicon field effect transistors (mosfet) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. b...
Bipolar junction transistors (BJTs) are active semiconductor devices commonly used for amplification and switching applications. In this study, transistors have been biased to operate in active region and by measuring the electrical characteristics of BJTs, the effect of gamma irradiation on each of these characteristics was investigated before and after the gamma irradiation by 60Co source. In...
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...
Related Articles Charge transport in dual-gate organic field-effect transistors APL: Org. Electron. Photonics 5, 20 (2012) Top-gate thin-film transistors based on GaN channel layer Appl. Phys. Lett. 100, 022111 (2012) Charge transport in dual-gate organic field-effect transistors Appl. Phys. Lett. 100, 023308 (2012) Solid polyelectrolyte-gated surface conductive diamond field effect transistors...
In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ...
We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.
Articles you may be interested in A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization Appl. Improvement of the electrical performance in metal-induced lat...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید