Carbon-tetrabromide CBr4 is utilized as the p-type doping source in modulation-doped pseudomorphic In0.3Ga0.7Sb /AlxGa1−xSb quantum well structure. Carbon delta-doping is achieved by switching off group III elements while the flow of CBr4 is on during the growth of AlSb barrier layer. The hole mobility of strained In0.3Ga0.7Sb quantum well decreases monotonically from 600 to 400 cm2 /V s while ...

An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm-3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentratio...

We studied the thermoelectric properties of a diketopyrrolopyrrole-based semiconductor (PDPP3T) via a precisely tuned doping process using Iron (III) chloride. In particular, the doping states of PDPP3T film were linearly controlled depending on the dopant concentration. The outstanding Seebeck coefficient of PDPP3T assisted the excellent power factors (PFs) over 200 μW m-1K-2 at the broad rang...

The lifetime degradation induced by light illumination or carrier injection which is observed in Czochralski-grown silicon (Cz-Si) leads to a significant decrease of solar cell efficiency. In this paper, realistic simulations of industrial type solar cells are performed by a simple empirical expression describing bulk lifetime as a function of the doping concentration. The optimal doping concen...

The metal-doping into the photocatalyst was evaluated for the photocatalytic degradation of bisphenol A in aqueous solution with ZnO powder. Au/ZnO, Ag/ZnO and Cu/ZnO were tested in the present work. Ag-doping ZnO was effective for the improvement of efficiency for the photocatalytic degradation of bisphenol A in water. The optimum doping concentration of silver was found to be 3 wt%. The pseud...

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi₂Te₃-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te₃. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier c...

N-type AlxGa12xN exhibits a dramatic decrease in the free-carrier concentration for x>0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: ~i! in the case of doping with oxygen ~the most common unintentional donor!, a DX transition occurs, which converts the shallow donor into a deep level; and ~ii! compensation by the cation vacancy (VGa ...

Carrier distributions associated with point charges in silicon are calculated via the quantum perturbation method and used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in kinetic lattice Monte Carlo simulations of defect-mediated diffusion to study dopant redistribution and associated variations in carrier ...

Ce(3+)-doped yttrium aluminum garnet (YAG:Ce) nanocrystals were successfully synthesized via a facile sol-gel method. Multiple characterization techniques were employed to study the structure, morphology, composition and photoluminescence properties of YAG:Ce nanophosphors. The YAG:Ce0.0055 sintered at 1030 °C exhibited a typical 5d(1)-4f(1) emission band with the maximum peak located at 525 nm...